Author:
Zhang Chengwei,Liao Wenyuan,Wang Hongran,Lai Canxiong,lu Guoguang,Wei Zhipeng,Yang Shaohua
Abstract
Abstract
In recent years, GaN-based semiconductor laser diode(LD) have become an ideal light source for laser display, because of their high power and unique luminous wavelength. However, there is a challenge about reliability of GaN-based LD in industrial application. In this paper, an accelerated aging test is conducted on the same group of GaN-based LD at a high current of 4.1A. The degradation rate of GaN-based LD is obtained by least square method. Besides, the optical characteristics and low frequency electrical noise of LD are analysed after degradation. The results show that the lasing wavelength and low frequency electrical noise of GaN-based LD will increase after degradation. This helps to provide experimental reference for degradtion research of GaN-based LD.
Subject
General Physics and Astronomy
Reference13 articles.
1. High-power laser light source for near-field optics and its application to high-density optical data storage[J];Partovi;Applied Physics Letters,1999
2. Pure copper layer formation on pure copper substrate using multi-beam laser cladding system with blue diode lasers[J];Hara;Applied Physics A,2020
3. GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs[J];Strauss;Proceedings of the Spie,2017
4. Accelerated Aging of 808nm High-power Semiconductor Laser Diodes[J];Lu;Semiconductor Optoelectronics,2005
5. Thermal characteristics of GaAs based laser diodes[J];Qiao;Infrared and Laser Engineering,2011