First-principles study of resistive random access memory based on AlN

Abstract

Abstract In this article, the properties of AlN-based RRAM and the effect of O doping on device performance were investigated. After determining the size of electrode and resistive layer through the calculation of LDOS and surface energy, the Ti/AlN and Pt/AlN interfaces were established by the calculation of the binding energy. Through the above steps, the RRAM model is finally established. The I-V curve obtained by calculation shows that the AlN-based RRAM has bipolar resistive switching characteristics. The device has a fairly high switch ratio (104). And its turn-on and turn-off threshold voltages are 1.7 V and 0.6 V, respectively. The calculation of DOS and charge density reveals that the resistance switching mechanism of the AlN-based RRAM is that N vacancies form a conductive path. Finally, by studying the influence of O doping on the formation energy of N vacancies, Electron localization function and migration energy, it is found that O doping can promote the conduction of the device and improve the uniformity of the conductive filaments.