Deposition and study of N-In co-doped sol-gel ZnO films

Abstract

Abstract Single and doped ZnO films are successfully deposited by a sol-gel method. ZnO:N, ZnO:In and co-doped (N, In) ZnO films are thermally treated at 300 °C and 600 °C. Their structural, vibrational and optical properties are studied. The ZnO:In:N films crystallize in a wurtzite phase, revealing a preferential orientation in the 002 plane. FTIR analysis shows that the two dopants affect greatly the shapes and positions of the absorption features. The ZnO:N:In films are highly transparent above 90% in the visible spectral range. The ZnO:In and ZnO:N:In films annealed at 400-600°C show a tendency of narrowing the optical band gap compared to ZnO.