Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method-Reference-Cited by-同舟云学术

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Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

Published:2011-12-06 Issue: Volume:327 Page:012017
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Kinoshita K,Arai Y,Inatomi Y,Miyata H,Tanaka R,Sone T,Yoshikawa J,Kihara T,Shibayama H,Kubota Y,Shimaoka T,Warashina Y,Sakata K,Takayanagi M,Yoda S

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/327/i=1/a=012017/pdf

Reference12 articles.

1. Numerical modelling of the growth and composition of GaxIn1-xAs bulk mixed crystals by the travelling heater method

2. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature

3. Growth of bulk SiGe single crystals by liquid phase diffusion

4. Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

5. Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ visualization of traveling solvent growth of thin Si0.7Ge0.3 crystals;Journal of Crystal Growth;2022-03

2. Melt Growth of Semiconductor Crystals Under Microgravity;Physical Science Under Microgravity: Experiments on Board the SJ-10 Recoverable Satellite;2019

3. Potential Semiconducting and Superconducting Metastable Si3C Structures under Pressure;Chemistry of Materials;2018-01-11

4. Effects of temperature gradient in the growth of Si0.5Ge0.5 crystals by the traveling liquidus-zone method on board the International Space Station;Journal of Crystal Growth;2016-12

5. Ge distribution in Si 0.9 Ge 0.1 alloy ingot grown from thin melt layer;Modern Electronic Materials;2016-12

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