Rare-earth based ultra-thin Lu2O3for high-k dielectrics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/61/i=1/a=046/pdf
Reference24 articles.
1. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
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3. Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics;Journal of Materials Science: Materials in Electronics;2020-04-03
4. Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices;Journal of Materials Science;2020-03-28
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