Synthesis of a chalcopyrite material, based on CuIn1−xGaXSe2(X = 0.3 y 0.5), for application as semiconductor layer, deposited by a low-cost technique

Abstract

Abstract The current work reports the synthesis and characterization of a photovoltaic material based on the CuIn1−xGaXSe2(X = 0.3 y 0.5) system, making use of the doctor blade method. For this purpose, homogeneous inks were obtained and worked under previous stoichiometry arrangement. The deposition process of thin films, were made in a heating plate on conventional glass substrates, previously washed and treated for this purpose. Once the layers of Cu, In, and Ga were deposited by chemical bath, a thermal treatment was performed at 550 °C for 30 min in a conditioned oven, in which the selenization process was performed. The obtained films were characterized by X-ray diffraction, Raman spectroscopy, solid-state impedance spectroscopy, UV spectroscopy and scanning electron microscopy techniques. The identification of the main crystalline phase could be corroborated, as well as the conductive and optoelectronic behavior of the solids in accordance with reported in literature. Simultaneously, it was checked that the method used allows obtaining layers of an optimum thickness, in order to be used as an absorbent layer in the design of solar devices.