Abstract
Abstract
Numerical analysis of the trimethylgallium (TMGa) decomposition during epitaxy growth process was analysed. The main aim is to compare previously published trimethylgallium decomposition models. Hence, thermo-fluidic and species transport simulations of the MOVPE (metal-organic vapour phase epitaxy) reactor were performed. Study is focused on a simplified, but most crucial mechanism of epitaxy growth: chemical model of a TMGa decomposition. Analysis of species densities and pyrolysis speed for different approaches were beneficial to understand emerging phenomena during epitaxy growth and to choose most applicable method for future consideration. Analysis have been conducted with the aid of Ansys Fluent software. Numerical simulations depict extreme results, indicating that selecting correct model as a base for the growth process modelling is crucial.
Subject
General Physics and Astronomy
Cited by
1 articles.
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