Zero bias anomaly in the two-site Anderson-Hubbard model with Gaussian distribution for disorder

Abstract

Abstract The Anderson-Hubbard model considers the correlation between disorder and other interactions in a strongly correlated electron system. Both disorder and correlations drive the metal-insulator transition but the densities of states behave in different ways. The zero bias anomaly (ZBA) referring to the V-dip shape of the density of states at the Fermi energy occurs in the strong disorder and strong interaction regime instead of a hard Coulomb gap in an insulator phase of strongly correlated interacting systems. In this paper, we use a Gaussian distribution for disorder to examine a two-site Anderson-Hubbard model. We also explain comprehensively the relationship between the phase diagram of ground states with various numbers of electrons and the behavior of the density of states. Furthermore, we want to investigate the effect of disorder distribution on the formation of the ZBA which originates from a hopping mechanism in two specific configurations.