Comparison of 1T1R and 1C1R ReRAM Arrays

Abstract

Abstract The rise of memristors with potential applications in memory has attracted wide interests. Memristors are typically assembled in crossbar arrays with data bits encoded by the resistance of individual cells. The 1T1R cell structure is the most popular for memristive memory as it eliminates sneak path currents. The transistor not only allows for flexible selection of memory cells but also facilitates the programming for computing-in-memory applications. In this paper, we replace the selector in the 1T1R configuration with a capacitor to form a selectorless and passive combination of ReRAM structure. Moreover, we evaluate the merits of the two structures in SkyWater 130nm CMOS technology by comparing the writing technique, power consumption, switching speed, and memory density. Furthermore, we compared the complexity of the readout method between 1T1R and 1C1R for a memory application. This work shows that the 1C1R configuration is a promising memory structure that consumes less energy, switches faster, has higher density, and has a simpler readout method when compared to 1T1R.