The process for preparing MX2 (M=Mo,W; X=Se,S) single crystal

Abstract

Abstract The layered semiconductor compound, as transition metal dichalcogenide family MX2 (M=Mo, W, X=S, Se) had stirred common interesting in solar energy conversion for its special photoelectronic properties. The synthesizing of its single crystal free of surface defects is a pressing matter of the moment. In this paper, the key points in preparing such single crystal are concluded, that is high vacuum, long time, and small ΔT, sometimes the transport agents have to be used to help the matter diffusion. And the proper quantities of these parameters are detailed in this paper too.