Author:
Tarkov S M,Antonov V A,Podlesny S N,Yemelyanov A A,Rebrov A K,Popov V P,Volodin V A,Vdovin V I,Timoshenko N I,Yudin I B,Nadolinny V A
Abstract
Abstract
Polycrystalline diamond film optical and electrical properties are investigated after the growth on <001> and <111> Si substrate by gas-jet MPCVD deposition in the presence of nitrogen in the gas mixture. Negatively charged NV− center formation was observed at the ~1.0 ppm level with the substitutional nitrogen concentration of 70 ppm. A comparison with the IIa type monocrystalline diamond plates with implanted and annealed nitrogen atoms at the 90 ppm concentration shows three times higher NV center formation efficiency by gas-jet MPCVD deposition than by ion implantation. CW optically detected magnetic resonance (ODMR) demonstrates the NV contented polycrystalline film application in a quantum magnetometry.
Subject
General Physics and Astronomy