Ignition Performance of SCB/Pb•BaTNR
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Published:2023-04-01
Issue:1
Volume:2460
Page:012140
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ISSN:1742-6588
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Container-title:Journal of Physics: Conference Series
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language:
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Short-container-title:J. Phys.: Conf. Ser.
Author:
Liu LJ,Wang ZJ,Li TT,Zhang T,Wen C,Guo XR,Tang L,Wang BY,Zhang X
Abstract
Abstract
Polysilicon thin-film semiconductor bridges (SCB) and Pb•BaTNR primary explosives are selected to prepare SCB/Pb•BaTNR samples, and their ignition performance is tested. The test results show that the SCB/Pb•BaTNR samples were ignited random when the ignition energy provided for SCB is insufficient but aroud critical value. Under different energy-storage capacitance, the voltages that lead to SCB completely gasifying into high-energy plasma are around 21V, indicating that charging voltage is the main factor affecting SCB elements to produce high-energy plasma. Ignition tests are performed on the SCB/Pb•BaTNR samples under the conditions of 47μF/21V, 64μF/21V, and 100μF/21V. The samples are found to ignite reliably, and the action time ranges from 0.17 ms to 0.4 ms, meeting the requirements for high instantaneity.
Subject
Computer Science Applications,History,Education
Reference10 articles.
1. Development of semiconductor bridge initiating explosive device;Liu;J. Explosive Materials,1995
2. The generalization, serialization, and combination of foreign initiating explosive devices and the analysis of their standards;Zhao;J. Aerospace Standardization,2020
3. Progress and development of semiconductor bridge initiator;Zhang;J. Explosive Materials,2009