Author:
Marenkin S,Ril A,Rabinovich O,Fedorchenko I,Didenko S,Sizov S,Osipov Yu
Abstract
Abstract
By the original method, using the sequential high-purity Mn and Sb metals evaporation, followed by annealing under high vacuum conditions, MnSb semiconductor films were synthesized. It is shown that the high chemical activity of nanostructured Mn and Sb films significantly reduces the manganese antimonide evaporation temperature. Films are p- type and have a high charge carriers mobility.
Subject
General Physics and Astronomy
Cited by
1 articles.
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