Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si0.7Ge0.3 Tri-Gate pMOSFETs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/834/i=1/a=012001/pdf
Reference10 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
3. Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.
4. 50-Å gate-Oxide MOSFET's at 77 K
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