Formation of SiO2 hard mask using dry etching and nanosphere lithography

Abstract

Abstract The features of the formation of a SiO2 hard mask using dry etching and nanosphere lithography are considered in the paper. A series of experiments was carried out using a variation of plasma etching parameters such as ICP and RF power, pressure as well as a substrate temperature. As a result, optimal parameters were found to obtain both good selectivity and high etching rate.