Calculation of the conductivity of a thin conductive layer taking into account Soffer boundary conditions and isoenergy surface anisotropy of conductor

Abstract

Abstract The task about the conductivity of a thin conductive layer in a longitudinal alternative electric field is solved. The relationship between layer thickness and charge carrier mean free path is arbitrary. The Soffer model is used as boundary conditions for Boltzmann equation. The isoenergy surface of a semiconductor is an ellipsoid of revolution. Analytical expressions are obtained for conductivity tensor components as functions of layer thickness, isoenergy surface anisotropy parameter, electric field frequency, surface roughness parameters, and chemical potential. The limiting cases of a degenerate and non-degenerate electron gas are considered. The dependences of conductivity tensor components on the above parameters are analyzed. The results obtained for cases of a degenerate and non-degenerate electron gas are compared. A comparative analysis of results is made with calculations in the view of diffuse-mirror boundary conditions and with known experimental data.