Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

Abstract

Abstract We have shown the possibility of Ga(In)AsP on GaAs (100) nanowire growth in a quasi-closed volume from the vapour phase witn the use of Sn catalyst. We have investigated the dynamics of nanowire formation depending on the growth time at constant V/III ratio given by the process temperature. It is shown that growth of free-standing nanowires is realized through the vapor-liquid-solid mechanism. Based on the Raman scattering data sequential growth of two phases have been shown. Phosphorous concentration in free-stamding nanowires was estimated to be high.