Author:
Shakhov L V,Davydov V Yu,Lebedev A A,Seredova N V,Nikitina I P,Zubov A V
Abstract
Abstract
Results of an epitaxial growth of 3C-SiC epilayers on hexagonal 6H-SiC, 4H-SiC substrates are described. The study of the obtained epitaxial layers grown on 6H substrates was made by photoluminescence and optical microscopy. Also, an image analysis of the interface of 3C-SiC epitaxial layers with 6H, 4H, and 15R substrates obtained by Transmission Electron Microscopy (TEM) are presented. Difference between the layers on the Si and C faces are discussed.
Subject
General Physics and Astronomy