Change of the defects density distribution profile over the area of the InGaN/GaN light-emitting heterostructures during current tests

Abstract

Abstract A method for measuring of the defects density distribution profile over the area of the LED chip is presented. Using the blue commercial LEDs as an example, it is shown that the emission power decreases when LEDs testing under the increased density pulsed current for 190 h. The decrease of the LEDs emission power is accompanied by a change in the defects density distribution profile. It was determined that during the degradation process a non-uniform increase in the defects density occurs in various regions of the heterostructure: in regions with a higher defect density, the increment in the density of defects is larger.