Optically injected electron gas and formation of charged excitons in type-II ZnSe/BeTe quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/51/i=1/a=092/pdf
Reference6 articles.
1. What is the origin of very strong photoluminescence in ZnSe/BeTe superlattices at liquid helium temperature?
2. Binding energy of charged excitons in ZnSe-based quantum wells
3. Charged excitons in ZnSe-based quantum wells
4. Linear and nonlinear optical properties of semiconductor quantum wells
5. Optical method for the determination of carrier density in modulation-doped quantum wells
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface structure effects on optical property of undoped ZnSe/BeTe type-Ⅱ quantum wells;Acta Physica Sinica;2010
2. Type-I interband transition in undoped ZnSe/BeTe type-II quantum wells under high excitation density;Semiconductor Science and Technology;2009-08-12
3. Extremely long electron spin coherence induced by a trion transition in ZnSe/BeTe type-II quantum wells;physica status solidi (c);2009-01
4. Spatially indirect photoluminescence of ZnSe/BeTe type II quantum wells in pulsed high magnetic fields;physica status solidi (c);2009-01
5. Optically induced long-lived electron spin coherence in ZnSe∕BeTe type-II quantum wells;Applied Physics Letters;2008-04-14
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