Issues of TRIM program as a tool for developing a silicon detectors radiation degradation scenario

Abstract

Abstract The presented study is focused around the TRIM program issues and its applications for prediction of silicon detectors degradation under heavy ions of 40Ar. Results of the simulations of low-energy ion (53.4 MeV) and high-energy ion (1.62 GeV) irradiation are demonstrated. Experimental data for silicon p+-n-n+ detectors irradiated by the low energy are also presented. Reliability of TRIM simulations application for studying silicon detectors degradation under heavy ion irradiation is discussed.