Numerical Simulation on Electroluminescent property of GaN Nanorod LED array

Abstract

Abstract The quantum well thickness and In concentration of the multi-section nanorod array structure increase with the sidewall height. At present, a two-section nanorod structure with a 466 nm spectrum at the bottom of the nanorod and a 488 nm spectrum at the top has been prepared. In this paper, according to the theory of yellow-blue light mixing to achieve white light, we have proposed a structure of the two-section nanorod, with a white LED model emitting a blue light spectrum at the bottom of the nanorod and a yellow light spectrum at the top. By varying the In concentration in the structure, the spectra of different In concentrations in different positions of the sidewall quantum wells were simulated to obtain the blue light in the sidewall quantum wells. We observed that the blue light of In cooperation range are 0.15∼0.22, the yellow light of In cooperation are 0.27∼0.34, and the corresponding wavelengths varied from 443nm to 498nm and 542nm to 610 nm. Therefore, the proposed structure will be a potential candidate in phosphor-free white-color emission LED.