Author:
Semakova A A,Lipnitskaya S N,Bazhenov N L,Kizhaev S S,Chernyaev A V,Stoyanov N D,Mynbaev K D
Abstract
Abstract
Electroluminescence of ‘flip-chip’ LED heterostructures containing active layers made of InAs and barrier layers made of InAsSb(Ga,P) was studied experimentally and modelled. At the room temperature, spontaneous emission attributed to band-to-band recombination was observed. The shape of the EL band was strongly affected by absorption in the substrate. At low temperatures (T=4.2 and 77 K), stimulated emission was observed. Factors affecting the appearance and quenching of stimulated emission are discussed.
Subject
General Physics and Astronomy
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献