Effect of the hydrostatic pressure on the electron mobility in delta-doped systems
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/167/i=1/a=012031/pdf
Reference13 articles.
1. The delta-doped field-effect transistor (δFET)
2. Diffusion and drift of Si dopants in δ‐dopedn‐type AlxGa1−xAs
3. Electron energy levels in a δ-doped layer in GaAs
4. Electronic structure ofn-type δ-doping multiple layers and superlattices in silicon
5. A simple model for delta‐doped field‐effect transistor electronic states
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1. Pressure, temperature and electric field effects on the photoionization cross section in a multilayered spherical quantum dot;The European Physical Journal Plus;2022-11-15
2. Intense laser field effects on the intersubband optical absorption and refractive index change in the δ-doped GaAs quantum wells;Chemical Physics;2017-04
3. Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure;AIP Conference Proceedings;2014
4. The effects of hydrostatic pressure on the nonlinear intersubband transitions and refractive index changes of different QW shapes;Optics Communications;2012-11
5. The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs;Solid State Sciences;2012-04
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