Electrical hysteresis of single-walled carbon nanotube field effect transistors and its modulation by an external magnetic field

Abstract

Abstract Electrical hysteresis in single-walled carbon nanotube (SWNT) field-effect transistors has been observed in 2002, which is a key factor to determine the performance of carbon nanotube field-effect transistors and related systems. Meanwhile, the mechanisms of the hysteresis are controversial and in-depth understanding is still required. In this work, we report the observation of hysteresis in a three-terminal SWNT FET at room temperature under atmospheric conditions. The hysteresis is found to be modulated by an external magnetic field. And there is a significant difference for the modulation of the hysteresis between the positive and negative magnetic fields. Possible mechanism is proposed and discussed.