Calculation of sputtering yields of SiO2 layers from the Si surface by helium ions bombardment

Abstract

Abstract An analytical model of the sputtering of two-component layered inhomogeneous targets by light ions bombardment has been developed, an analytical formula has been obtained, which makes it possible to calculate the total and partial sputtering coefficients of a binary layer of target heterogeneity by light ions bombardment. The formula obtained is used to calculate the sputtering coefficients of silicon oxide layers from the surface of a uniform silicon substrate. The calculation results are in good agreement with the data of computer simulation.