Effect of the In (Ga) inter-diffusion on the optical properties in InAs/GaAs annealed quantum dots
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/245/i=1/a=012066/pdf
Reference9 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
3. Calculation of the energy levels in quantum dots
4. Tuning self-assembled InAs quantum dots by rapid thermal annealing
5. Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots
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2. Epitaxial InAs Films on GaSb Substrate and Study on Optical Properties;ACTA PHOTONICA SINICA;2019
3. Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation;Nanoscale Research Letters;2012-07-31
4. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons;Nanoscale Research Letters;2011-11-07
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