Photoelectric Characteristics of n-ZnO/p-Si Heterojunction Photodetector

Abstract

Abstract To solve the problems of the high experimental cost and single experimental result, the n-ZnO/p-Si heterojunction photodetector was simulated by TCAD software. Based on the established model, the photoelectric characteristics of n-ZnO/p-Si heterojunction photodetector were simulated and analyzed in terms of ZnO carrier concentration and thickness. The results show that the dark current is about 10−14 A, the photocurrent is about 10−8 A, and the photocurrent is at least three orders of magnitude larger than the dark current. The fast response time is 10−10 s. The maximum response of the device is 0.25 A/W in the ultraviolet band and the maximum response is 0.35 A/W in the visible light region. This simulated result establishes a theoretical foundation for further experimental research.