Study on electron and hole states in tilted quantum well structures

Abstract

Abstract In this study, the energy states of electron and hole in GaxIn1-xNyAs1-y/GaAs tilted quantum well structure have been theoretically investigated. The content of x and y are 0.65 and 0.005 respectively. The energy states and wave functions have been calculated by solving the Schrödinger equation in real space. The well width of 2-10 nm, barrier width of 2-10 nm and tilted layer width of 1-3 nm are considered in this work. The results show that the electron and hole energies decrease with increasing the well width and tilted layer width. The wave functions are both symmetric (ground state) and anti-symmetric (the first excited state), and spread out as the well width increases. In addition, the barrier width of couple tilted quantum well structure has also been studied. It is found that the probability of finding electron and hole are equal in both wells and the wave function within barrier layer decreases with increasing the barrier width as well. The ground state energy increases and the first excited state energy decreases as the barrier increases. As a result, the two states tend to the same level when the barrier is more than 8 nm. This is because the wide barrier can decrease the interaction between two quantum wells and makes each quantum well acts as an isolated quantum well with no interaction between them.