Tunnelling properties of Al doped MgB2thin film junctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/234/i=4/a=042039/pdf
Reference15 articles.
1. Recent advances in crystal growth of pure and chemically substituted MgB2
2. Effects of Al doping on the normal and superconducting properties ofMgB2:A specific heat study
3. Point-contact spectroscopy of Al- and C-dopedMgB2: Superconducting energy gaps and scattering studies
4. Point-contact Andreev-reflection spectroscopy in segregation-free Mg1−xAlxB2single crystals up tox= 0.32
5. Local tunneling study of three-dimensional order parameter in theπband of Al-dopedMgB2single crystals
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Aluminum Ion Implantation in MgB2 Thin Films;IEEE Transactions on Applied Superconductivity;2019-08
2. Electron Tunneling Spectroscopic Measurements on Al-doped MgB2 Thin Films;Physics Procedia;2012
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