Modeling of a profile of a PbTe semiconductor nanofilm-Reference-Cited by-同舟云学术

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Modeling of a profile of a PbTe semiconductor nanofilm

Published:2019-11-01 Issue:1 Volume:1331 Page:012002
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Bukharov D.N.,Kucherik A.O.,Arakelyan S.M.,Lotin A. A.

Abstract

Abstract The results of experiments on the production of plumbum telluride semiconductor films are given. The models of ballistic and random deposition describing the profile of the films obtained are proposed. The performed simulation qualitatively correctly reflects the relief of the obtained films.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1331/1/012002/pdf

Reference9 articles.

1. Determination of the fractal dimension of the surface of the epitaxial n-GaAs in the local limit;Torkhov;Physics and Technology of Semiconductors,2009

2. Bimodal Ensemble of Nanoparticles on the Surface of Epitaxial Lead Telluride Films under Continuous Laser Radiation;Arakelian;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques,2015

3. Fractal Concepts in Surface Growth

4. Surface growth of two kinds of particle deposition models;Wang;Phys. Rev. E.,1995

5. Ballistic deposition on surfaces;Meakin;Physical Review A,1986

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