Resonant Activation of Resistance Switching in Memristors Based on YSZ Films with Au Nanoparticles

Abstract

Abstract The resonant activation of resistance switching (RS) of a memristor based on an yttria stabilized zirconia (YSZ) film with embedded Au nanoparticles (NPs) was investigated. The switching was made by triangular pulses with high frequency (HF) sinusoid added. A non-monotonous dependence a ratio of the electric current through the memristor in the low resistive state to the current in the high resistive one on the HF sinusoid frequency was found. The effect was explained by a finite electron tunneling time between the Pt electrode and Au NPs. This conclusion was supported by measuring a dependence of HF memristor capacitance on the probing signal frequency.