Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching

Abstract

Abstract The diamond nitrogen-vacancy center with a negative charge (NV−) exhibits exceptional optical properties and enables highly sensitive detection of multiple physical quantities. The development of a simple and efficient method for fabricating NV− centers in diamonds holds significant importance in promoting their widespread application. The fabrication method of NV− centers is explored in this work, utilizing high-energy photons emitted by argon ions to induce vacancies in type Ia diamond substrates. The processed samples are optical characterized, and the characteristic peak and zero phonon line corresponding to the NV− center can be observed in Raman and photoluminescence spectra respectively. The concentration of NV− centers in samples could reach up to 153.9 ppb, estimated by integrating the fluorescence intensity of the photoemission spectrum. The samples exhibit the spin characterization of NV− centers, which achieve a maximum contrast of 1.5% in the optical detection magnetic resonance (ODMR) spectra.