Author:
Al-agealy Hadi J M,Maadhede Taif Saad Al,Al-Khafaji AbdulKareem A,Aleabi Suad H,Hassooni Mohsin A,Rabeea Rajaa Faisel
Abstract
Abstract
The mechanism of the electronic flow rate at Al-TiO2 interfaces system has been studied using the postulate of electronic quantum theory. The different structural of two materials lead to suggestion the continuum energy level for Al metal and TiO2 semiconductor. The electronic flow rate at the Al-TiO2 complex has affected by transition energy, coupling strength and contact at the interface of two materials. The flow charge rate at Al-TiO2 is increased by increasing coupling strength and decreasing transition energy.
Subject
General Physics and Astronomy
Cited by
2 articles.
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