Circuit Design Method to Improve Cryogenic Buffer Amplifiers Dynamic Parameters on CJFETs
-
Published:2020-01-01
Issue:1
Volume:1443
Page:012004
-
ISSN:1742-6588
-
Container-title:Journal of Physics: Conference Series
-
language:
-
Short-container-title:J. Phys.: Conf. Ser.
Author:
Nikitina E P,Bugakova A V,Zhuk A A
Abstract
Abstract
We consider a circuit design method to increase a slew rate increase and transient process setting time decrease in buffer amplifiers (BAs), intended for operation in analog interfaces of physical values sensors and automatic devices at low temperatures. Differentiating transient correction circuits are introduced into the classical circuits of the BAs on complementary field-effect transistors (CJFETs) to improve these dynamic parameters. We investigated two buffer amplifier’s topologies: single-ended and balanced ones. The article shows the practical use of the proposed BA in the output and input stages of the high-speed operational amplifiers.
Subject
General Physics and Astronomy
Reference15 articles.
1. Silicon Analog Components
2. Fabrication and characterization of low-noise cryogenic Si JFETs;Goldberg,1995
3. Temperature dependent electrical characteristics of a junction field effect transistor for cryogenic subattoampere charge detection;Kavangary;AIP Advances,2019