Improving the performance of n-i-p perovskite photodetectors via bathocuproine electron transport interlayer

Abstract

Abstract In this study, a planar photodetector with a n-i-p structure comprised of Glass/ITO/SnO2/bathocuproine (BCP)/Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3/P3HT/Ag is investigated. Here, the BCP layer was inserted as a passivation layer between the SnO2 electron transport layer (ETL) and the perovskite to reduce the leakage current while improving its photodetectivity. As a result, the photodetector has a broad spectral response range (300-800 nm), and a low dark current of 8.20 × 10−7 A/cm2. In addition, the responsivity of the device reached 0.432 A W−1 when operated at self-powered mode, the corresponding detectivity reaches 7.4 × 1011 Jones, while the linear dynamic range reaches 51.3 dB and response time of 28 μs.