Investigation of ultrathin carbon film growth and etching by in-situ X-ray reflectivity

Abstract

Abstract The results of studies of carbon films in the process of their growth and etching in plasma of radio-frequency discharge in real time by in-situ X-ray reflectometry are presented. The film thickness, growth rate, density and surface roughness were calculated from the time dependence of the reflection coefficient of x-rays at a wavelength of 1.54 A. A method for the production of carbon films with a super-smooth surface was proposed.