Red electroluminescence from Tb2O3: Eu/PEDOT: PSS heterojunction light-emitting diodes-Reference-Cited by-同舟云学术

Red electroluminescence from Tb2O3: Eu/PEDOT: PSS heterojunction light-emitting diodes

Published:2020-10-01 Issue:1 Volume:1639 Page:012095
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Wan Guangmiao,Wang Shenwei,Li Ling,Yin Xue,Mu Guangyao,Yi Lixin

Abstract

Abstract In this work, heterojunction light-emitting diodes made of Tb2O3: Eu and PEDOT: PSS were prepared and the impact of PEDOT: PSS on luminous intensity of the devices was studied. The electrical and optical properties of the devices were tested. Five luminescence peaks at 544, 585, 610, 648, and 695 nm, corresponding to Tb3+ 5D4 →7F5 and Eu3+ 5D0 →7F1,5D0 →7F2,5D0 →7F3 and5D0 →7F4 transitions were observed. The PEDOT: PSS film has an enhancement effect on electroluminescence.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1639/1/012095/pdf

Reference18 articles.

1. Enhanced emission from Si-based light-emitting diodes using surface plasmons;Pillai;Applied Physics Letters,2006

2. Epitaxial growth and characterization of Si-based light-emitting Si/beta-FeSi2 film/Si double heterostructures on Si 001 substrates by molecular beam epitaxy;Sunohara;Thin Solid Films,2006

3. Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices;Modreanu;Physica E-low-dimensional Systems & Nanostructures,2003

4. Si-based rare-earth-doped light-emitting devices;Castagna;Proceedings of Spie the International Society for Optical Engineering,2004

5. Giant stability enhancement of rare-earth implanted SiO_2 light emitting devices by an additional SiON protection layer;Sun;Applied Physics Letters,2008