An X-ray detector based on a Pt-MgZnO-Pt structure

Abstract

Abstract Direct-conversion X-ray detectors made of wide-bandgap semiconductors have many advantages and important applications. In this study, a direct-conversion X-ray detector based on Pt-MgZnO-Pt structure was fabricated by radio frequency magnetron sputtering. The X-ray detection characteristics of the device were studied. The optimized device with a structure of Pt-MgZnO-Pt exhibited a responsivity of 72.6 nC Gyair –1 cm–2, response time of ∼0.1 s (rise)/∼0.4 s (fall), and a high SNR of 206 at a bias of 30 V under a dose rate of 100 mGyair/s. The experimental results demonstrate the good application prospects of the wide-bandgap MgZnO-based X-ray detectors.