Theoretical study of electrical transport across 1D ferromagnet-insulator-ferromagnet junction in small applied field

Abstract

Abstract We theoretically investigated how the insulating band gap, the thickness of the insulating layer, and the external field affect the electric transport through a ferromagnetic metal-insulator-ferromagnetic metal junction. Applying the Slonczewski model with the inclusion of a small external field, we calculated the magnetoresistance ratio (MR) and found that the increase in both the insulating band gap and the thickness boost MR. MR is also increased with the magnetic field. Our model indicates that MR reaches a maximum value at a particular strength of the applied field that depends on the thickness of insulating layer.