Study on TSV insulating medium based on SACVD process

Abstract

Abstract TSV silicon switching board technology has the advantages of short global interconnection, small delay, low power consumption and high integration. The dielectric insulation performance in the TSV hole will directly affect the signal integrity and power integrity of the TSV silicon switching board. The insulating dielectric layer of TSV requires good forming ability and step covering, and lower leakage current and good heat resistance reliability. In this paper, the filling capacity of SACVD process is analyzed, the coverage rate of SACVD process is studied under different process parameters, and the leakage current of silicon dioxide film is measured by planar capacitance structure. Finally, the leakage current test of the TSV pairs is carried out online. Before the substrate thinning, the leakage current of the two blind hole TSV pairs is measured by the probe station. The voltage ranges form 0 to 50V, and the leakage current ranges from a few pA to a few hundred pA.