Aluminum Nitride Thin Film Pyroelectric Detector Based on Metamaterial Absorber

Abstract

Abstract Highly integrated pyroelectric detectors have been widely used in infrared spectrometers and gas detection. Aluminum nitride(AlN) has excellent compatibility with CMOS processes and is often used to fabricate piezoelectric and optoelectronic devices with superior performance. This study proposes a pyroelectric detector with AlN thin film as the sensitive element and integrated metamaterial absorber. Magnetron sputtering technology was used to prepare the AlN thin film as the sensitive element. To achieve narrowband specific absorption subsequently, a three-layer metamaterial absorber structure was designed and simulated. Preliminary processing of AlN pyroelectric detectors was performed based on MEMS technology. The designed narrowband absorbing structure exhibits near unity specific absorption, with a quality factor of 17.75. This study preliminarily verifies the application potential of AlN thin films in mid-infrared pyroelectric sensors, and realizes narrowband absorption through metamaterial structures, laying the foundation for the development of mid-infrared gas detection sensors.