Simulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer

Abstract

Abstract This paper proposes a Micro Electro Mechanical Systems piezoresistive accelerometer based on a whole SiC substrate. Compared with Si-based sensors, SiC-based sensors have stronger mechanical advantages and unique advantages for applications in ultra-high temperature environments. The characteristics of the accelerometer are designed and numerically simulated, and the accelerometer is evaluated in terms of stress load and working frequency band. An innovative design is carried out to eliminate the stress concentration phenomenon in the corner area of the sensor, which guarantees the working safety of the fragile structure of SiC. After fabrication, packaging and vibration experiment, it is found that the sensor’s working sensitivity can reach 0.21mv/g, and its linearity can reach 98%.