Simulation study for ion beam extraction of 150 keV/2mA ion implantor by using SIMION 8.1

Author:

Adabiah S R,Saefurrochman ,Munawaroh S,Haniah S R

Abstract

Abstract A simulation of ion beam extraction and beam formation process for 150 keV/2mA ion implantor using SIMION 8.1. has been done. This simulation is aimed to provide an overview of the influence of the geometry and the effect of the variation of the voltage of both extractor and the acceleration tube of the ion source of ion implantor on the trajectory, beam diameter and beam emittance. The simulation was carried by varying the amount of particles that went through the acclerating tube, varying the accelerating voltage, and the extraction voltage, from 50 to 3000 particles, from 30 kV to 150 kV, and from 1 kV to 10 kV respectively. The simulation results show that the ion extraction process and the ion beam formation at the ion source of ion implantor is very dependent on the geometry and the voltage of both electrode and the extractor on the device. The incorrect electrode geometry and voltage would cause the particle trajectory to be non-linear, while the angle of the beam would diverge too much. We’ve also found that the amount of simulated particle would affect the homogeneity of the cross section of the beam. The bigger the amount of the simulated particle, the more homogeneous and stable the beam becomes. Unfortunately, for 3000 particles the running process was very long and prone to errors. Therefore in this simulation, the amount of particles is set to 2000, which gave us a rather uniform beam cross section. The variation of extraction voltage 1 kV to 10 kV while keeping the accelerating voltage constant at 150 kV produced an increment of the diameter of the ion beam from 3.84 cm to 4.12 cm. The variation of accelerating voltage from 30 kV to 150 kV while keeping the extraction voltage constant at 10 kV caused the spot diameter of the ion beam to increase. The value of the spot diameter of the ion beam when the accelerating voltage is kept at 150 kV are 4.12 ± 0.05 cm and 4.05 ± 0.05 cm for y-axis and x-axis respectively.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference7 articles.

1. Pemanfaatan Implantor Ion 150 keV / 2mA untuk Surface Treatment;Sujitno,2006

2. Factors enhancing production, extraction and focusing of positive ion beams;Abdelrahman;Ain Shams Eng. J.,2012

3. Simulation of ion beam extraction and focusing system;Soliman;Chin. Phys. C,2011

4. Simulation studies for ion beam extraction systems;Abdelrahman;Braz. J. Phys.,2009

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3