Author:
Uvarov A V,Morozov I A,Baranov A I,Maximova A A,Vyacheslavova E A,Kudryashov D A,Gudovskikh A S
Abstract
Abstract
This article is devoted to the formation and study of the properties of amorphous gallium phosphide layers obtained by plasma-chemical deposition at a temperature of 250 °C. The optical and structural properties of the obtained layers on fused silica and silicon substrates were investigated. The possibility of the formation of a homogeneous amorphous gallium phosphide with a smooth surface at a low temperature and low power of RF plasma was shown.
Subject
General Physics and Astronomy