Author:
Dementev P A,Dementeva E V
Abstract
Abstract
In this work, a method for estimating the saturation time of traps in dielectric layers based on the KPM is proposed. Using hafnium oxide layers as an example, it is shown that when charging with a series of points with different durations, a different dependence of the residual potential on time is observed. It is assumed that this technique makes it possible to evaluate the performance of devices based on dielectric layers.
Subject
General Physics and Astronomy