Structure of GaN grown from vapour phase on a seeded layer of gallium melt formed on a boron nitride ceramic substrate

Abstract

Abstract In this study, two empirical models for the growth of millimetre–thick GaN material with either highly ordered textured or polycrystalline structure on a ceramic substrate by Hydride Vapour Phase Epitaxy (HVPE) are considered. It is suggested that the specific type of the structure of GaN is determined at the nucleation stage and depends on the character of the wetting of the surface of the substrate by the liquid gallium melt.