Photoluminescence and Raman studies of GaN films grown by MOCVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/187/i=1/a=012021/pdf
Reference37 articles.
1. Metal organic vapour phase epitaxy of GaN and lateral overgrowth
2. Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition
3. Excitonic recombination in GaN grown by molecular beam epitaxy
4. Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy
5. The influence of phonons on the optical properties of GaN
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