Improvement of MOVPE grown ZnTe:P layers by annealing treatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference9 articles.
1. Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates
2. Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus
3. Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus
4. Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus
5. Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2013-05
2. Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2013-05
3. Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE;physica status solidi (c);2012-05-14
4. Influence of source transport rate upon phosphorus doping of ZnTe layers grown by MOVPE method;physica status solidi (c);2012-05-08
5. Effect of VI/II ratio upon photoluminescence and electrical properties of phosphorus-doped ZnTe films grown by metalorganic vapor phase epitaxy;Thin Solid Films;2011-11
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