Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods-Reference-Cited by-同舟云学术

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Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

Published:2018-11 Issue: Volume:1123 Page:012048
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Roslan Ameer F,Salehuddin F,M Zain A S,Mansor Norhisham,Kaharudin K E,Ahmad I,Hazura H,Hanim A R,Idris S K,Zaiton A M,Zarina B Z,Mohamad N R,A Hamid Afifah Maheran

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/1123/i=1/a=012048/pdf

Reference20 articles.

1. Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications

2. Variation in Transistor Performance and Leakage in Nanometer-Scale Technologies

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET;Journal of Physics: Conference Series;2020-03-01

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